Silicon Electrodeposition in a Water-Soluble KF–KCl Molten Salt: Properties of Si Films on Graphite Substrates

The electrodeposition of crystalline Si films on graphite substrates was investigated in KF–KCl molten salts at 1073 K. optimum K2SiF6 concentration and current density to obtain adherent, compact, smooth were using surface cross-sectional scanning electron microscopy. crystallinity the deposited measured by X-ray diffraction backscatter techniques. By photoelectrochemical measurements CH3CN–TBAPF6–Fc room temperature, film electrodeposited substrate 100 mA cm−2 for 30 min KF–KCl–K2SiF6 (3.5 mol%) found be an n-type semiconductor. When SiCl4 used as source, melt with a higher molar ratio KF smoother substrates. after introduction gas (2.37 confirmed p-type CH3CN–TBAClO4–EVBr2. characteristics (p-type or n-type) is determined contaminating impurities (B, P, Al).